TOKYO–(BUSINESS WIRE)–Mitsubishi Electric Corporation (TOKYO: 6503) announced today that, beginning January 21, it will start shipping samples of four new trench silicon carbide metal-oxide-semiconductor field-effect transistor (SiC-MOSFET) bare dies (chips not encased in protective housing) designed for use in power electronics equipment, such as electric vehicle (EV) traction inverters, onboard chargers, and power supply systems for renewable energy sources including solar power. These new